Impact of Device Parameter Variation on RF Performance of Gate Electrode Workfunction Engineered (GEWE)- Silicon Nanowire (SiNW) MOSFET

In this paper, we explore the quantitative investigation of the high-frequency performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire (SiNW) MOSFET and compared with Silicon Nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET in terms of transconductance (gm), cut-off frequency (fT), maximum oscillator frequency (fMAX), power gains (Gma, GMT) parasitic capacitances, stern’s stability factor and intrinsic delay. Further, using three-dimensional (3-D) device simulations, we have also examined the efficacy of parameter variations in terms of oxide thickness, radius of silicon nanowire, channel length and gate metal workfunction engineering on RF/microwave figure of merits of GEWE-SiNW MOSFET. Simulation result reveals significant enhancement in fT and fMAX; and a reduction in switching time in GEWE-SiNW MOSFET due to alleviated short channel effects (SCEs), improved drain current and smaller parasitic capacitance, thus providing detailed knowledge about the device’s RF performance at such aggressively scaled dimensions. Keywords— Power Gains, GEWE, RF, Silicon Nanowire MOSFET, Parasitic capacitance, fT and fMAX